Investigation of point defects in HfO2 using positron annihilation spectroscopy: internal electric fields impact

14th International Workshop on Slow Positron Beam Techniques & Applications

Alemany, M.^1,2,4 ; Chabli, A.^2,6 ; Oudot, E.^1,3,5 ; Pierre, F.^3,7 ; Desgardin, P.^4 ; Bertin, F.^3 ; Gros-Jean, M.^1 ; Barthe, M.F.^4

STMicroelectronics, 850 rue Jean Monnet, Crolles

38926, France^1

Univ. Grenoble Alpes, INES, Le Bourget du Lac

F-73375, France^2

Univ. Grenoble Alpes, Grenoble

F-38000, France^3

CNRS, CEMHTI UPR3079, Univ. Orléans, Orléans

F-45071, France^4

Univ. Grenoble Alpes, Lab. LTM (CEA-LETI/Minatec), Grenoble

38000, France^5

CEA, LITEN, Department of Solar Technologies, Le Bourget du Lac

F-73375, France^6

CEA, LETI, MINATEC Campus, Grenoble

F-38054, France^7

关键词: Deposition process;    Different layers;    Electrical field;    Electrical field simulations;    Internal electric fields;    Material defect;    Post deposition annealing;    Silicon substrates;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/791/1/012019/pdf
DOI  :  10.1088/1742-6596/791/1/012019

来源: IOP

【 摘 要 】

In this work, we report on the PAS characterization of sintered HfO2bulk ceramic and HfO2layers deposited with various methods on a silicon substrate with a layer thickness ranging from 25 to 100 nm. PAS measurements are sensitive to the deposition process type and the post-deposition annealing. Chemical and structural characterisations have been performed on the same samples. The PAS results are discussed regarding to the material defects of the different layers. In addition, a built-in electrical field induced by charged defects located at the HfO2/Si interface as well as in the HfO2layer must be taken into account in the PAS data fitting. Both non-contact internal electrical field measurements and internal electrical field simulations support the PAS finding.