Evolution of SiO2/Ge/HfO2(Ge) multilayer structure during high temperature annealing

THIN SOLID FILMS

卷:518

Article; Proceedings Paper

Sahin, D.¹  Yildiz, I.^1,2  Gencer, A. I.¹  Aygun, G.³  Slaoui, A.⁴  Turan, R.¹ 

[1] Middle E Tech Univ, Dept Phys, TR-06531 Ankara, Turkey

[2] Middle E Tech Univ, Cent Lab, TR-06531 Ankara, Turkey

[3] Izmir Inst Technol, Dept Phys, TR-35430 Izmir, Turkey

[4] ULP, CNRS, InESS, F-67037 Strasbourg, France

关键词: Ge;    Segregation;    HfO2;    XPS;    Depth profiling;    Raman spectroscopy;   

DOI  :  10.1016/j.tsf.2009.09.156

来源: Elsevier

【 摘 要 】

Use of germanium as a storage medium combined with a high-k dielectric tunneling oxide is of interest for non-volatile memory applications The device structure consists of a thin HfO2 tunneling oxide with a Ge layer either in the form of continuous layer or discrete nanocrystals and relatively thicket SiO2. layer functioning as a control oxide In this work, we Studied interface properties and formation kinetics in SiO2/Ge/HfO2(Ge) multilayer structure during deposition and annealing This material structure was fabricated by magnetron sputtering and studied by depth profiling with XPS and by Raman spectroscopy It was observed that Ge atoms penetrate into HfO2 layer during the deposition and segregate out with annealing This is related to the low solubility of Ge In HfO2 Which is observed in other oxides as well Therefore, Ge out diffusion might be an advantage in forming well controlled floating gate on top of HfO2. In addition we observed the Ge oxidation at the interfaces, where HfSiOx formation is also detected (C) 2009 Elsevier B.V. All rights reserved

【 授权许可】

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