Thin film of guest-free type-II silicon clathrate on Si(111) wafer

THIN SOLID FILMS

卷:609

Article

Kume, Tetsuji¹  Ohashi, Fumitaka¹  Sakai, Kentaro²  Fukuyama, Atsuhiko³  Imai, Motoharu⁴  Udono, Haruhiko⁵  Ban, Takayuki¹  Habuchi, Hitoe⁶  Suzuki, Hidetoshi³  Ikari, Tetsuo³  Sasaki, Shigeo¹  Nonomura, Shuichi¹ 

[1] Gifu Univ, Fac Engn, 1-1 Yanagido, Gifu 50111, Japan

[2] Miyazaki Univ, Ctr Collaborat Res & Community Cooperat, 1-1 Gakuen Kibanadai Nishi, Miyazaki, Japan

[3] Miyazaki Univ, Fac Engn, 1-1 Gakuen Kibanadai Nishi, Miyazaki 88921, Japan

[4] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan

[5] Ibaraki Univ, Grad Sch Sci & Engn, Hitachi, Ibaraki 3168511, Japan

[6] Gifu Coll, Natl Inst Technol, Dept Elect & Comp Engn, Kamimakuwa 2236-2, Motosu, Gifu 5010495, Japan

关键词: Si clathrate;    Photovoltaic response;    TEM observation;    Thin film;   

DOI  :  10.1016/j.tsf.2016.03.056

来源: Elsevier

【 摘 要 】

Thin films of guest-free type-II Si clathrate (Si-136) were fabricated on Si(111) wafers in two steps: NaxSi136 thin-film formation by thermal decomposition of NaSi precursor films and Na removal from the NaxSi136 film by a heat treatment with iodine. Cross-sectional TEM observation and XRD and Raman measurements verified the formation of 1-mu m-thick Si-136 films on the Si wafer. Since the prepared films showed n-type conduction, pn junction devices were developed by a Si136/p-type Si structure. This device showed a photovoltaic (PV) response under white light illumination. The thin film formation and the PV response of Si136 indicated this Si allotrope to be the next-generation platform for semiconductor technology. (C) 2016 Elsevier B.V. All rights reserved.

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