Terahertz detector with series connection of asymmetric gated transistors

2nd Russia-Japan-USA Symposium on the Fundamental and Applied Problems of Terahertz Devices and Technologies

Yermolaev, D.M.^1 ; Marem'Yanin, K.M.^2 ; Maleev, N.A.^4 ; Zemlyakov, V.E.^1 ; Gavrilenko, V.I.^2 ; Popov, V.V.^3 ; Shapoval, S.Yu.^1

Institute of Microelectronic Technology and High-Purity Materials, Russia^1

Institute for Physics of Microstructures, Russia^2

Kotelnikov Institute of Radio Engineering and Electronics (Saratov Branch), Russia^3

Ioffe Physical Technical Institute, Russia^4

关键词: Field effect transistor (FETs);    Gate contact;    One-dimensional arrays;    Photovoltaic response;    Responsivity;    Series connections;    Series-connected;    Terahertz detectors;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/486/1/012016/pdf
DOI  :  10.1088/1742-6596/486/1/012016

来源: IOP

【 摘 要 】

Terahertz (THz) detection by a one-dimensional array of series connected field-effect transistors (FETs) is studied experimentally. Such terahertz detector demonstrates greatly enhanced voltaic responsivity up to 2 kV/W. Asymmetrical position of the gate contact in each FET in the array enables strong photovoltaic response.