TCAD study of sub-THz photovoltaic response of strained-Si MODFET

19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures

Notario, J. A. Delgado^1 ; Meziani, Y.M.^1 ; Velázquez-Pérez, J.E.^1

Departamento de Física Aplicada, Universidad de Salamanca, Pza. de la Merced s/n, Edificio Trilingüe, Salamanca

E-37008 E-37008, Spain^1

关键词: Drain contacts;    Gate length;    Nonresonant;    Photovoltaic;    Photovoltaic response;    Strained-Si;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/647/1/012041/pdf
DOI  :  10.1088/1742-6596/647/1/012041

来源: IOP

【 摘 要 】

This paper reports on a bi-dimensional TCAD study of the sub-THz response of strained-Si MODFETs. A charge boundary condition for the floating drain contact was implemented to obtain the photovoltaic (PV) response of the device. A non-resonant THz PV response was obtained in agreement with theoretical and experimental works. A main result of this study is that the PV response is strongly influenced by both the gate length and the gate topology. In particular, it was found that a dual-finger gate gives the maximum response at 300GHz.