Ni and Ti diffusion barrier layers between Ti-Si-C and Ti-Si-C-Ag nanocomposite coatings and Cu-based substrates

SURFACE & COATINGS TECHNOLOGY

卷:206

Article

Sarius, N. G.^1,2,3  Lauridsen, J.²  Lewin, E.⁴  Lu, J.²  Hogberg, H.²  Oberg, A.⁵  Ljungcrantz, H.⁶  Leisner, P.^1,3  Eklund, P.²  Hultman, L.² 

[1] SP Tech Res Inst Sweden, SE-50115 Boras, Sweden

[2] Linkoping Univ, Dept Phys, Thin Film Phys Div, SE-58183 Linkoping, Sweden

[3] Jonkoping Univ, Sch Engn, SE-55111 Jonkoping, Sweden

[4] Uppsala Univ, Dept Chem Mat, Angstrom Lab, SE-75120 Uppsala, Sweden

[5] ABB Corp Res, SE-72178 Vasteras, Sweden

[6] Impact Coatings AB, SE-58216 Linkoping, Sweden

关键词: Titanium carbide;    Nanocomposite;    Physical vapor deposition (PVD);    Diffusion;    Barrier;    Annealing;   

DOI  :  10.1016/j.surfcoat.2011.11.014

来源: Elsevier

【 摘 要 】

Sputtered Ni and Ti layers were investigated as a diffusion barrier to substitute electroplated Ni between Ti-Si-C and Ti-Si-C-Ag nanocomposite coatings and Cu or CuSn substrates. Samples were subjected to thermal annealing studies by exposure to 400 degrees C for 11 h. Dense diffusion barrier and coating hindered Cu from diffusing to the surface. This condition was achieved for electroplated Ni in combination with magnetron-sputtered Ti-Si-C and Ti-Si-C-Ag layers deposited at 230 degrees C and 300 degrees C. and sputtered Ti or Ni layers in combination with Ti-Si-C-Ag deposited at 300 degrees C. (C) 2011 Elsevier B.V. All rights reserved.

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