Ion-sensitive field-effect transistors fabricated in a commercial CMOS technology

SENSORS AND ACTUATORS B-CHEMICAL

卷:57

Article; Proceedings Paper

Bausells, J ; Carrabina, J ; Errachid, A ; Merlos, A

关键词: ion-sensitive field-effect transistors;    CMOS sensors;    silicon oxynitride;   

DOI  :  10.1016/S0925-4005(99)00135-5

来源: Elsevier

【 摘 要 】

The fabrication of pH-sensitive ISFET devices in an unmodified two-metal commercial CMOS technology (1.0 m from Atmel-ES2) is reported. The ISFET devices have a gate structure compatible with the CMOS process, with an electrically floating electrode consisting on polysilicon plus the two metals. The passivation oxynitride layer acts as the pH-sensitive material in contact with the liquid solution. The devices have shown good operating characteristics, with a 47 mV/pH response. The use of a commercial CMOS process allows the straightforward integration of signal-processing circuitry. An ISFET amplifier circuit has been integrated with the ISFET sensors. (C) 1999 Elsevier Science S.A. All rights reserved.

【 授权许可】

Free