Ultra-high repetition rate InAs/InP quantum dot mode-locked lasers

OPTICS COMMUNICATIONS

卷:284

Article

Lu, Z. G.¹  Liu, J. R.¹  Poole, P. J.¹  Jiao, Z. J.^1,2  Barrios, P. J.¹  Poitras, D.¹  Caballero, J.¹  Zhang, X. P.² 

[1] CNR, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

[2] Concordia Univ, Dept Elect & Comp Engn, Montreal, PQ H3G 1M8, Canada

关键词: Quantum dot;    InAs/InP semiconductor materials;    Mode-locked laser;    Fabry-Perot cavity;    C- and L-band;    Femtosecond pulses;    High repetition rate;   

DOI  :  10.1016/j.optcom.2010.11.083

来源: Elsevier

【 摘 要 】

We have designed, grown and fabricated InAs/InP quantum dot (QD) waveguides as the gain materials of mode-locked lasers (MLLs). Passive InAs/InP QD MLLs based on single-section Fabry-Perot (F-P) cavities with repetition rates from 10 GHz to 100 GHz have been demonstrated in the C- and L-band. Femtosecond (fs) pulses with pulse duration of 295 fs have been achieved. The average output power is up to 50 mW at the room temperature of 18 degrees C. By using the external fiber mixed cavities fs pulse train with a repetition rate of 437 GHz has been generated. We have also discussed the working principles of the developed QD MLLs. Crown Copyright (C) 2010 Published by Elsevier B.V. All rights reserved.

【 授权许可】

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