High-Power 810-nm Passively Mode-Locked Laser Diode With Al-Free Active Region

IEEE Photonics Journal

Guy Aubin¹  Michel Krakowski¹  Sylvain Barbay¹  Kamel Merghem²  Olivier Parillaud²  Quentin Gaimard²  Abderrahim Ramdane³ 

[1] C2N, CNRS, Univ Paris-Sud, Univ Paris Saclay, Palaiseau, France;Centre de Nanosciences et de Nanotechnologies &x2013;III-V Lab, Palaiseau, France;

关键词: Mode-locked laser;    near infrared;    semiconductor laser diode;    Al free;   

DOI  :  10.1109/JPHOT.2018.2886460

来源: DOAJ

【 摘 要 】

We report on a mode locked semiconductor laser for high-power pulse generation in the 810-nm waveband. This is based on a novel GaAsP/GaInP single quantum-well structure, with Aluminum-free active region. Average output powers higher than 40 mW are reported in narrow ridge two-section devices. A 1.65-mm-long laser with 70 μm saturable absorber yields a stable mode locked regime at a 23-GHz repetition rate as evidenced by a record low RF linewidth of 75 kHz over a wide range of gain currents. Other laser dynamics are also reported at lower frequencies.

【 授权许可】

Unknown