Impurity resistivity of the double-donor system Si : P,Bi

Article

关键词: METAL-INSULATOR-TRANSITION;    SILICON;    BISMUTH;   

DOI  :  10.1103/PhysRevB.60.15824

来源: SCIE

【 摘 要 】

The electrical resistivity of the shallow double-donor system Si:P,Bi, prepared by ion implantation, was investigated in the temperature range from 1.7 to 300 K. Good agreement was obtained between the measured resistivities and resistivities calculated by a generalized Drude approach for the same temperatures and dopant concentrations. The critical impurity concentration for the metal-nonmetal transition for the double-doped Si:P,Bi system was found to lie between the critical concentrations of the two single-doped systems, Si:P and Si:Bi. [S0163-1829(99)11747-8].

【 授权许可】

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