Spin polarization of strongly interacting two-dimensional electrons: The role of disorder

Article

关键词: METAL-INSULATOR-TRANSITION;    INPLANE MAGNETIC-FIELD;    2 DIMENSIONS;    2-DIMENSIONAL ELECTRONS;    SYSTEM;    B=0;    BEHAVIOR;    SILICON;    MOSFETS;    ANGLE;   

DOI  :  10.1103/PhysRevB.65.201106

来源: SCIE

【 摘 要 】

In high-mobility silicon metal-oxide-semiconductor field-effect transistors, the g(*)m(*) inferred indirectly from magnetoconductance and magnetoresistance measurements with the assumption that g(*)mu(B)H(s)=2E(F) are in surprisingly good agreement with g(*)m(*) obtained by direct measurement of Shubnikov-de Haas oscillations. The enhanced susceptibility chi(*)proportional to(g(*)m(*)) exhibits critical behavior of the form chi(*)proportional to(n-n(0))(-alpha). We examine the significance of the field scale H-s derived from transport measurements, and show that this field signals the onset of full spin polarization only in the absence of disorder. Our results suggest that disorder becomes increasingly important as the electron density is reduced toward the transition.

【 授权许可】

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