Manifestation of strong correlations in transport in ultraclean SiGe/Si/SiGe quantum wells

Article

关键词: METAL-INSULATOR-TRANSITION;    TEMPERATURE-DEPENDENCE;    COULOMB INTERACTION;    SILICON;    CONDUCTIVITY;    COLLOQUIUM;    SYSTEM;    B=0;   

DOI  :  10.1103/PhysRevB.102.081119

来源: SCIE

【 摘 要 】

We observe that in a strongly interacting two-dimensional electron system in ultraclean SiGe/Si/SiGe quantum wells, the resistivity on the metallic side near the metal-insulator transition increases with decreasing temperature, reaches a maximum at some temperature, and then decreases by more than one order of magnitude. We scale the resistivity data in line with expectations for the transport of strongly correlated Fermi systems and find a nearly perfect agreement with theory over a wide range of electron densities.

【 授权许可】

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