Interaction correction to the longitudinal conductivity and Hall resistivity in high-quality two-dimensional GaAs electron and hole systems

Article

关键词: TEMPERATURE-DEPENDENCE;    COULOMB INTERACTION;    WEAK-LOCALIZATION;    MOBILITY;   

DOI  :  10.1103/PhysRevB.72.241310

来源: SCIE

【 摘 要 】

We study the corrections in the low temperature limit to both the longitudinal conductivity and Hall resistivity due to electron-electron interactions in high-quality GaAs systems. Using the recent theory of Zala we find that the interaction corrections to the conductivity and Hall resistivity are consistent with each other in n-GaAs, although the agreement is not as good in p-GaAs. This suggests that interaction effects can explain the metallic drop in resistivity at B=0 in n-GaAs systems, but more work is required to understand p-GaAs systems.

【 授权许可】

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