Renormalization of hole-hole interaction at decreasing Drude conductivity: Gated GaAs/InxGa1-xAs/GaAs heterostructures

Article

关键词: METAL-INSULATOR TRANSITIONS;    TEMPERATURE-DEPENDENCE;    WEAK-LOCALIZATION;    2D ELECTRON;    MOBILITY;   

DOI  :  10.1103/PhysRevB.76.165314

来源: SCIE

【 摘 要 】

The diffusion contribution of the hole-hole interaction to the conductivity is analyzed in gated GaAs/InxGa1-xAs/GaAs heterostructures. We show that the change of the interaction correction to the conductivity with the decreasing Drude conductivity results both from the compensation of the singlet and triplet channels and from the arising prefactor alpha(i)< 1 in the conventional expression for the interaction correction.

【 授权许可】

Free