MAGNETIC-RESONANCE STUDIES OF INTERSTITIAL MN IN GAP AND GAAS

Article

关键词: ELECTRONIC-STRUCTURE;    GALLIUM-ARSENIDE;    IMPURITIES;    SILICON;   

DOI  :  10.1103/PhysRevB.44.3012

来源: SCIE

【 摘 要 】

We report the observation of an additional electron-paramagnetic-resonance (EPR) center in neutron-irradiated GaP. The center labeled as GaP-NL1 was further investigated with the electron-nuclear double-resonance technique. We also observed another, similar EPR center in GaAs doped with Mn, which we label as GaAs-NL1. On the basis of this study, we were able to identify these centers as an interstitial Mn atom probably surrounded by four nearest-neighbor Ga atoms. We note that this is an observation by the EPR technique of an interstitial transition-metal impurity in a III-V compound.

【 授权许可】

Free