Crystal Growth and Wafer Processing for High Yield and High Efficiency Solar Cells: Final Report, 1 October 2003 - 15 January 2008

Rozgonyi, G. A. ; Youssef, K.

关键词: CARRIER LIFETIME;    CRYSTAL GROWTH;    DEFECTS;    DISLOCATIONS;    EFFICIENCY;    FRACTURE PROPERTIES;    GRAIN BOUNDARIES;    HARDNESS;    IMPURITIES;    INTERSTITIALS;    LIFETIME;    MECHANICAL PROPERTIES;    OXYGEN;    POINT DEFECTS;    SILICON;    SOLAR CELLS PV;    CRYSTAL GROWTH;    WAFER PROCESS;    HIGH YIELD;    HIGH EFFICIENCY;    SOLAR CELLS;    GRAIN BOUNDARY;    LIGHT ELEMENT IMPURITIES;    NANOINDENTATION;    POLYCRYSTALLINE SILICON;    Solar Energy - Photovoltaics;   

DOI  :  10.2172/942087
RP-ID  :  NREL/SR-520-44375
PID  :  OSTI ID: 942087
Others  :  Other: AAT-2-31605-06
Others  :  TRN: US200902%%90

美国|英语

来源: SciTech Connect

【 摘 要 】

Hardness, elastic modulus, and fracture toughness of low and high carrier-lietime regions in polycrystalline silicon were evaluated using the nanoindentation technique.