科技报告详细信息
| Hydrogenation Methods and Passivation Mechanisms for c-Si Photovoltaics: Final Technical Report, 2 January 2002 - 15 January 2008 | |
| Estreicher, S. K. | |
| 关键词: DEFECTS; HYDROGENATION; LIFETIME; OPTIMIZATION; PASSIVATION; PENETRATION DEPTH; PROCESSING; RESEARCH PROGRAMS; SOLAR CELLS PV; DEFECTS; CARRIER LIFETIME; PASSIVATION; CHARACTERIZATION; SILICON; OPTIMIZATION; FIRST-PRINCIPLES THEORY; PROCESSING STRATEGIES; HYDROGENATION; Solar Energy - Photovoltaics; | |
| DOI : 10.2172/946617 RP-ID : NREL/SR-520-44376 PID : OSTI ID: 946617 Others : Other: AAT-1-31605-4 Others : TRN: US200903%%973 |
|
| 美国|英语 | |
| 来源: SciTech Connect | |
PDF
|
|
【 摘 要 】
Joint experimental and theortetical research program to improve processes used to eliminate or passivate lifetime-reducing defects in the Si bulk.
【 预 览 】
| Files | Size | Format | View |
|---|---|---|---|
| RO201705180000494LZ | 587KB |
PDF