Prospects for high temperature ferromagnetism in (Ga,Mn)As semiconductors

Article

关键词: DILUTED MAGNETIC SEMICONDUCTORS;    V COMPOUND SEMICONDUCTORS;    MOLECULAR-BEAM EPITAXY;    QUALITY GAMNAS FILMS;    CURIE-TEMPERATURE;    TRANSPORT-PROPERTIES;    ELECTRONIC-STRUCTURE;    GALLIUM-ARSENIDE;    GA1-XMNXAS;    MN;   

DOI  :  10.1103/PhysRevB.72.165204

来源: SCIE

【 摘 要 】

We report on a comprehensive combined experimental and theoretical study of Curie temperature trends in (Ga,Mn)As ferromagnetic semiconductors. Broad agreement between theoretical expectations and measured data allows us to conclude that T-c in high-quality metallic samples increases linearly with the number of uncompensated local moments on Mn-Ga acceptors, with no sign of saturation. Room temperature ferromagnetism is expected for a 10% concentration of these local moments. Our magnetotransport and magnetization data are consistent with the picture in which Mn impurities incorporated during growth at interstitial Mn-I positions act as double-donors and compensate neighboring Mn-Ga local moments because of strong near-neighbor Mn-Ga-Mn-I antiferromagnetic coupling. These defects can be efficiently removed by post-growth annealing. Our analysis suggests that there is no fundamental obstacle to substitutional Mn-Ga doping in high-quality materials beyond our current maximum level of 6.8%, although this achievement will require further advances in growth condition control. Modest charge compensation does not limit the maximum Curie temperature possible in ferromagnetic semiconductors based on (Ga,Mn)As.

【 授权许可】

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