Thermodynamic and thermoelectric properties of (Ga,Mn)As and related compounds

Article

关键词: METAL-INSULATOR-TRANSITION;    DILUTED MAGNETIC SEMICONDUCTORS;    FERROMAGNETIC SEMICONDUCTOR;    SYSTEMS;    GAMNAS;   

DOI  :  10.1103/PhysRevB.83.245210

来源: SCIE

【 摘 要 】

Various experimental results providing information on thermodynamic density of states in (Ga,Mn)As are analyzed theoretically assuming that holes occupy GaAs-like valence bands. Allowing for Gaussian fluctuations of magnetization, the employed model correctly describes a critical behavior of magnetic specific heat found experimentally in (Ga,Mn)As near the Curie temperature T(C) [S. Yuldashev et al., Appl. Phys. Express 3, 073005 (2010)]. The magnitudes of room-temperature thermoelectric power, as measured for GaAs: Be and (Ga,Mn)As [M. A. Mayer et al., Phys. Rev. B 81, 045205 (2010)], are consistent with the model for the expected energy dependencies of the hole mobility. The same approach also describes temperature variations of conductance specific to the Anderson-Mott localization, found for various dimensionality (Ga,Mn)As nanostructures at subkelvin temperatures [D. Neumaier et al., Phys. Rev. Lett. 103, 087203 (2009)]. We conclude that the examined phenomena do not provide evidence for an enhancement of density of states by the presence of an impurity band at the Fermi energy in ferromagnetic (Ga,Mn)As. Furthermore, for (Ga, Mn) As we provide expected values of both electronic specific heat at low temperatures T << T(C) and magnetization as a function of the magnetic field at T(C).

【 授权许可】

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