Numerical Study of Sub-Gap Density of States Dependent Electrical Characteristics in Amorphous In-Ga-Zn-O Thin-Film Transistors

Electronics

Xue Zhang¹  Jaehoon Park²  Jihwan Park³  Jin-Hyuk Bae³  Do-Kyung Kim³ 

[1] College of Ocean Science and Engineering, Shandong University of Science and Technology, Qingdao 266590, China;Department of Electronic Engineering, Hallym University, Chuncheon 24252, Korea;School of Electronic and Electrical Engineering, Kyungpook National University, 80 Daehakro, Bukgu, Daegu 41566, Korea;

关键词: In-Ga-Zn-O;    thin-film transistors;    sub-gap density of states;    electrical characteristics;    numerical analysis;   

DOI  :  10.3390/electronics9101652

来源: DOAJ

【 摘 要 】

We demonstrate the effect of the sub-gap density of states (DOS) on electrical characteristics in amorphous indium-gallium-zinc (IGZO) thin-film transistors (TFTs). Numerical analysis based on a two-dimensional device simulator Atlas controlled the sub-gap DOS parameters such as tail acceptor-like states, tail donor-like states, Gauss acceptor-like states, and Gauss donor-like states in amorphous IGZO TFTs. We confirm accuracy by exploiting physical factors, such as oxygen vacancy, peroxide, hydrogen complex, band-to-band tunneling, and trap-assisted tunneling. Consequently, the principal electrical parameters, such as the threshold voltage, saturation mobility, sub-threshold swing, and on-off current ratio, are effectively tuned by controlling sub-gap DOS distribution in a-IGZO TFTs.

【 授权许可】

Unknown