Design and analysis of novel tri-active layer channel amorphous-IGZO thin-film transistor

Micro & nano letters

article

Shashi K. Dargar¹  Viranjay M. Srivastava¹ 

[1] Department of Electronic Engineering, Howard College, University of KwaZulu-Natal

关键词: II-VI semiconductors;    amorphous semiconductors;    semiconductor thin films;    wide band gap semiconductors;    gallium compounds;    indium compounds;    zinc compounds;    thin film transistors;    novel tri-active layer channel amorphous-IGZO thin-film transistor;    high-field mobility materials;    amorphous indium–gallium–zinc oxide;    α-IGZO;    thin-film transistors;    simulation-based analysis;    single layer channel structures;    double active layer channel structures;    double-active layer channel TFTs;    TAL channel TFT;    high field-effect mobility;    front–back channel thickness-ratios;    improved switching parameters;    threshold voltage;    high ON-to-OFF current ratio;    electrical characteristics;    next-generation flat-panel displays;    size 38.4 cm;    voltage -4.24 V;    InGaZnO;   

DOI  :  10.1049/mnl.2019.0293

学科分类：计算机科学（综合）

来源: Wiley

【 摘 要 】

Among high-field mobility materials, amorphous indium–gallium–zinc oxide (In–Ga–ZnO) (α-IGZO) has been prominent for their use in thin-film transistors (TFTs). In this Letter, the authors present a novel structure of TFT with tri-active layer (TAL) channel consisting of α-IGZO and In–SnO (ITO) materials. Further, the simulation-based analysis of the proposed device and characteristics in comparison to the single and double active layer channel structures have been reported. This work also analyses the effect of front–back channel thickness-ratios in double-active layer channel TFTs. The proposed TAL channel TFT describes improved switching parameters such as lower threshold voltage ( V TH ) − 4.24 V, high field-effect mobility ( µ FE ) 38.4 cm 2 /V-s, moderate subthreshold swing 0.398 mV/decade, and reasonably high ON-to-OFF current ratio ( I ON / I OFF ) 0.18 × 10 12 . The electrical characteristics persuade the significance of the proposed structure in next-generation flat-panel displays.

【 授权许可】

CC BY|CC BY-ND|CC BY-NC|CC BY-NC-ND