Influence of the thickness of a crystal on the electrical characteristics of Cd(Zn)Te detectors

Sklyarchuk, V.¹  Fochuk, p.¹  Rarenko, I.¹  Zakharuk, Z.¹  Sklyarchuk, O. F.¹  Bolotnikov, A. E.²  James, R. B.² 

[1] Chernivtsi National Univ. (Ukraine);Brookhaven National Lab. (BNL), Upton, NY (United States)

关键词: Cd(Zn)Te;    detectors;    electrical characteristics;    I-V curves;    space-charge limited currents (SCLC);   

DOI  :  10.2172/1224185
RP-ID  :  BNL--108379-2015
PID  :  OSTI ID: 1224185
Others  :  R&D Project: 20062
Others  :  Other: NN2001000

学科分类：材料科学（综合）

美国|英语

来源: SciTech Connect

【 摘 要 】

We studied the electrical characteristics of Cd(Zn)Te detectors with rectifying contacts and varying thicknesses, and established that their geometrical dimensions affect the measured electrical properties. We found that the maximum value of the operating-bias voltage and the electric field in the detector for acceptable values of the dark current can be achieved when the crystal has an optimum thickness. This finding is due to the combined effect of generation-recombination in the space-charge region and space-charge limited currents (SCLC).