A Study on the Transition of Copper Oxide by the Incorporation of Nitrogen

Electronics

YongJoo Kim¹  Jozeph Park²  Song-Yi Ahn³  Hyun-Suk Kim³  Daehwan Choi⁴  Kyung Park⁵ 

[1] Biosystems Machinery Engineering, Chungnam National University, Daejeon 34134, Korea;Department of Material Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, Korea;Department of Materials Science and Engineering, Chungnam National University, Daejeon 34134, Korea;School of Integrated Technology, Yonsei University, Incheon 21983, Korea;Semiconductor Process Laboratory, WONIK IPS, Gyeonggi-do 17709, Korea;

关键词: nitrogen incorporation;    cuon;    p-type oxide semiconductor;    reactive sputtering;    thin-film transistors;   

DOI  :  10.3390/electronics8101099

来源: DOAJ

【 摘 要 】

In the present study, the effects of nitrogen incorporation on the transition of a p-type copper oxide semiconductor are investigated. The properties of sputtered copper oxide and nitrogen-incorporated copper oxide are evaluated and compared at various nitrogen gas flow rates. The results indicate that the addition of nitrogen results in an increased optical bandgap, accompanied by significantly reduced tail states compared to pristine copper oxide. In addition, X-ray diffraction and X-ray photoelectron spectroscopy reveal that the incorporation of nitrogen stimulates the transition from copper (II) oxide to copper (I) oxide.

【 授权许可】

Unknown