Transparent Conductive p-Type Cuprous Oxide Films in Vis-NIR Region Prepared by Ion-Beam Assisted DC Reactive Sputtering

Coatings

Sheng-Chi Chen¹  Tsung-Yen Kuo²  Wan-Xia Wang³  Fen Liu⁴  Song-Sheng Lin⁵  Hui Sun⁵  Qian Shi⁵  Ming-Jiang Dai⁵ 

[1] Department of Materials Engineering and Center for Plasma and Thin Film Technologies, Ming Chi University of Technology, Taipei 243, Taiwan;Institute of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan;School of Mechanical, Electrical & Information Engineering, Shandong University, Weihai 264209, China;Shandong Key Laboratory of Optical Astronomy and Solar-Terrestrial Environment, School of Space Science and Physics, Shandong University, Weihai 264209, China;The Key Lab of Guangdong for Modern Surface Engineering Technology, National Engineering Laboratory for Modern Materials Surface Engineering Technology, Guangdong Institute of New Materials, Guangzhou 510651, China;

关键词: p-type conductivity;    Cu₂O film;    vis-NIR region;    reactive sputtering;    optoelectronic property;   

DOI  :  10.3390/coatings10050473

来源: DOAJ

【 摘 要 】

Cu₂O thin film has been widely studied due to its intrinsic p-type conductivity. It can be used as p-type transparent conductive electrode or hole transport layer in various potential applications. However, its intrinsic p-type conductivity is very limited, which needs to be optimized by introducing acceptor defects. In this work, the electrical properties of the Cu₂O films was improved through introducing interstitial oxygen in the films those were deposited via direct current sputtering assisted by oxygen ion beam. The results show that with oxygen ion beam current increase, the carrier concentration effectively improves. However, with more interstitial oxygen introduced, the film’s crystallinity significantly reduces, as well as the carrier mobility decreases. Meanwhile, all of the Cu₂O films present moderate transmittance in the visible region (400–800 nm), but ideal transmittance in the near infrared (NIR) light region (800–2500 nm). When compared with the strong reflection of the n-type transparent conductive film to the near infrared light, the Cu₂O film is transparent conductive in NIR region, which expands its application in the fabrication of NIR electrical devices.

【 授权许可】

Unknown