Experimental Investigation of the Effects of Reactor Neutron-Gamma Pulse Irradiation on SiGe HBTs Under Different Bias Conditions

IEEE Access

Ning Han¹  Zhuoqi Li¹  Mathew Adefusika Adekoya²  Shuhuan Liu²  Ci Song³ 

[1] Department of Nuclear Science and Technology, Xi&x2019;an Jiaotong University, Xi&x2019;an, China;

关键词: Silicon germanium;    heterojunction bipolar transistors;    neutron radiation effects;    annealing;   

DOI  :  10.1109/ACCESS.2021.3130950

来源: DOAJ

【 摘 要 】

The degradation characteristics of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) under different bias modes (forward, cutoff and saturation) during irradiation were reported after multiple pulsed neutron-gamma irradiation at room temperature. The radiation-sensitive parameters of the test samples, including base current I_B, collector current I_C and DC current gain $\beta $ , were measured and compared before and after every reactor n- $\gamma $ pulse irradiation. The test results show that I_B increased with increasing fluence, and I_C slightly increased in the low base-emitter voltage V_BE region (approximately from 0.4 V to 0.5 V) and decreased in the high-V_BE region (approximately V_BE >0.5 V). Moreover, the degradation degree of the test samples was different under different bias conditions. The performance of the test samples under cutoff bias mode displayed the most serious degradation, while those under forward bias mode suffered minimum damage. Meanwhile, the time-dependent annealing characteristics of the DC current gain for SiGe HBTs at various bias conditions were compared and analyzed.

【 授权许可】

Unknown