Design of a 250-Gbit/s SiGe HBT Electrooptic Modulator

IEEE Photonics Journal

Tuhin Guha Neogi¹  Guofu Niu²  John D. Cressler³  Daniel Connelly⁴  John F. McDonald⁵  Zhaoran Rena Huang⁵ 

[1] $^{1}$Electrical, Computer, and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, USA;$^{2}$Alabama Microelectronics Science and Technology Center, Electrical and Computer Engineering Department, Auburn University, Auburn, AL, USA;$^{3}$School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta , GA, USA;$^{4}$Synopsys Inc., Dallas, TX, USA;Electrical, Computer, and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, NY, USA;

关键词: Semiconductor device modeling;    integrated optics;    optical modulation;    plasma dispersion effect;    SiGe;    heterojunction bipolar transistors;   

DOI  :  10.1109/JPHOT.2011.2169658

来源: DOAJ

【 摘 要 】

We present a rigorous electrical and optical analysis of a highly scaled, graded-base, SiGe heterojunction bipolar transistor (HBT) electrooptic (EO) modulator. In this study, we propose a 2-D electrical model and a 3-D optical model for a graded-base SiGe HBT structure that is capable of operating at a data bit rate of 250 Gbit/s or higher. In this structure, apart from a polysilicon/low doped emitter ( width = 90 nm) and a strained SiGe graded base ( depth = 8.5 nm), a selectively implanted collector (SIC) (depth = 26 nm) is introduced. Furthermore, at a base-emitter swing of 0 to 1.0 V, this model predicts a rise time of 3.48 ps and a fall time of 0.55 ps. Optical simulations predict a π phase shift length (L_π) of 204 μm, with an extinction ratio of 13.2 dB at a wavelength of 1.55 μm.

【 授权许可】

Unknown