Transient Simulation of Semiconductor Devices Using a Deterministic Boltzmann Equation Solver

IEEE Journal of the Electron Devices Society

Sung-Min Hong¹  Jae-Hyung Jang¹ 

[1] School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju, South Korea;

关键词: Semiconductor device modeling;    transient simulation;    Boltzmann transport equation;    deterministic Boltzmann equation solver;    spherical harmonics expansion;   

DOI  :  10.1109/JEDS.2017.2780837

来源: DOAJ

【 摘 要 】

In this paper, the transient simulation of semiconductor devices using a deterministic Boltzmann equation solver is presented. Transient simulation capability is implemented in a deterministic Boltzmann equation solver for the 3-D momentum space based on the spherical harmonics expansion. The numerical simulation results with implicit time marching methods demonstrate that the transient simulation using a deterministic Boltzmann equation solver can be performed. The impact of the quasi-static approximation for the current density, which is widely adopted in the momentum-based equations, is tested for various devices such as homogeneous samples, an N⁺NN⁺ structure and an MOSFET.

【 授权许可】

Unknown