Effect of Annealing Temperature and Oxygen Flow in the Properties of Ion Beam Sputtered SnO2−x Thin Films

Materials

Chun-Min Wang³  Chun-Chieh Huang²  Jui-Chao Kuo³  Dipti Ranjan Sahu¹  Jow-Lay Huang³ 

[1] Amity Institute of Nanotechnology, Amity University, Sector 125, Noida, India; E-Mail:;Department of Electrical Engineering, Cheng Shiu University, No. 840, Chengcing Road, Niaosong Township, Kaohsiung 833, Taiwan;Department of Materials Science and Engineering, National Cheng Kung University, No. 1, University Road, Tainan 701, Taiwan; E-Mails:

关键词: SnO₂;    transparent conductive oxide (TCO);    oxygen flow ratio;    annealing;   

DOI  :  10.3390/ma8085243

来源: mdpi

【 摘 要 】

Tin oxide (SnO_2−x) thin films were prepared under various flow ratios of O₂/(O₂ + Ar) on unheated glass substrate using the ion beam sputtering (IBS) deposition technique. This work studied the effects of the flow ratio of O₂/(O₂ + Ar), chamber pressures and post-annealing treatment on the physical properties of SnO₂ thin films. It was found that annealing affects the crystal quality of the films as seen from both X-ray diffraction (XRD) and transmission electron microscopy (TEM) analysis. In addition, the surface RMS roughness was measured with atomic force microscopy (AFM). Auger electron spectroscopy (AES) analysis was used to obtain the changes of elemental distribution between tin and oxygen atomic concentration. The electrical property is discussed with attention to the structure factor.

【 授权许可】

CC BY   
© 2015 by the authors; licensee MDPI, Basel, Switzerland.