Operation of silicon-germanium heterojunction bipolar transistors on silicon-on-insulator in extreme environments

SiGe;Extreme environments;HBT-on-SOI;Heterojunction bipolar transistor;Silicon germanium;TCAD

Bellini, Marco ; Electrical and Computer Engineering

University:Georgia Institute of Technology

Department:Electrical and Computer Engineering

关键词: SiGe;    Extreme environments;    HBT-on-SOI;    Heterojunction bipolar transistor;    Silicon germanium;    TCAD;   

Others  :  https://smartech.gatech.edu/bitstream/1853/28206/1/bellini_marco_200905_phd.pdf

美国|英语

来源: SMARTech Repository

【 摘 要 】

Recently, several SiGe HBT devices fabricated on CMOS-compatible silicon on insulator (SOI) substrates (SiGe HBTs-on-SOI) have been demonstrated, combining the well-known SiGe HBT performance with the advantages of SOI substrates. These new devices are especially interesting in the context of extreme environments - highly challenging surroundings that lie outside commercial and even military electronics specifications. However, fabricating HBTs on SOI substrates instead of traditional silicon bulk substrates requires extensive modifications to the structure of the transistors and results in significant trade-offs. The present work investigates, with measurements and TCAD simulations, the performance and reliability of SiGe heterojunction bipolar transistors fabricated on silicon on insulator substrates with respect to operation in extreme environments such as at extremely low or extremely high temperatures or in the presence of radiation (both in terms of total ionizing dose and single effect upset).