Anisotropic Confinement, Electronic Coupling and Strain Induced Effects Detected by Valence-Band Anisotropy in Self-Assembled Quantum Dots

Nanoscale Research Letters

关键词: Molecular beam epitaxy;    Self-assembled quantum dots;    Inter-dot coupling;    Anisotropic effects;    Linear polarized photoluminescence emission;    Grazing-incidence X-ray diffraction synchrotron;    Optoelectronic;   

DOI  :  

来源: DOAJ

【 摘 要 】

Abstract

A method to determine the effects of the geometry and lateral ordering on the electronic properties of an array of one-dimensional self-assembled quantum dots is discussed. A model that takes into account the valence-band anisotropic effective masses and strain effects must be used to describe the behavior of the photoluminescence emission, proposed as a clean tool for the characterization of dot anisotropy and/or inter-dot coupling. Under special growth conditions, such as substrate temperature and Arsenic background, 1D chains of In_0.4Ga_0.6 As quantum dots were grown by molecular beam epitaxy. Grazing-incidence X-ray diffraction measurements directly evidence the strong strain anisotropy due to the formation of quantum dot chains, probed by polarization-resolved low-temperature photoluminescence. The results are in fair good agreement with the proposed model.

【 授权许可】

Unknown