Porous Silicon Surface Stability Studies by Thermal Treatment of Forming Gas

Sensors & Transducers

S. S. ISLAM¹  Gunjan AGGARWAL¹ 

[1] Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia (A Central University), Jamia Nagar, New Delhi-110025, India;

关键词: Porous silicon;    Electrochemical etching method;    Forming gas;    Sensing and stability.;   

DOI  :  

来源: DOAJ

【 摘 要 】

Porous silicon sample was electrochemically etched and then treated with forming gas. While investigating with scanning electron microscope (SEM), micro-Raman, Photoluminescence (PL) and Fourier Transform Infrared (FTIR) spectroscopy, it is found that the sample was stable for six months. The Raman and PL results show almost overlapping peak and intensity after six months which depicts six months surface stability of sample. Electrical capacitive sensing technique was also used to check the ageing effect of the sensor device. Ethanol vapor sensing was periodically checked in the range of 25-100 ppm for six months, and no degradation is observed in its sensing performance.

【 授权许可】

Unknown