Investigation of the electrical performance of hfo2 dielectrics deposited on passivated germanium substrates

7th International Conference on Key Engineering Materials

材料科学;工业技术

Lu, Q.^1 ; Mu, Y.^1 ; Zhao, Y.^1 ; Zhao, C.Z.^2 ; Taylor, S.^1 ; Chalker, P.R.^3

Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool

L69 3GJ, United Kingdom^1

Department of Electrical and Electronic Engineering, Xi'An Jiaotong-Liverpool University, Suzhou

215123, China^2

Center for Materials and Structures, School of Engineering, University of Liverpool, Liverpool

L69 3GH, United Kingdom^3

关键词: Chemical treatments;    Electrical performance;    Forming gas;    Germanium substrates;    HfO2 dielectric;    Interface quality;    Octanethiol;    Propanethiol;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/201/1/012029/pdf
DOI  :  10.1088/1757-899X/201/1/012029

来源: IOP

【 摘 要 】

Propanethiol solution (0.1 M) in 2-propanol, octanethiol solution (0.1 M) in 2-propanol and 20% (NH4)2S solution in water were used to passivate the germanium substrates. HfO2thin films of 150 ALD cycles were then deposited on the passivated germanium substrates. The morphology of the thin films was investigated by X-ray diffraction and it was found that the morphology of the thin films was not affected by the chemical treatments. A lower leakage current density was observed in the passivated samples compared with the witness one. In addition, the interface quality and long-time stress reliability of the passivated samples were improved when the samples were annealed in forming gas ambient.