Optical Properties and Field Emission of ZnO Nanorods Grown on p-Type Porous Si

Bulletin of the Korean chemical society

Whikun Yi¹  Jongtaek Lee¹  Sang-hwa Lee¹  Jungwoo Lee¹  Jae-yong Kim¹  Taehee Park¹  Eunkyung Park¹  Juwon Ahn¹ 

关键词: n-Type ZnO nanorod;    Porous silicon;    Photoluminescence;    Electroluminescence;    Field emission;   

DOI  :  

学科分类：化学（综合）

来源: Korean Chemical Society

【 摘 要 】

N-type ZnO nanorods were grown on p-type porous silicon using a chemical bath deposition (CBD) method (p-n diode). The structure and geometry of the device were examined by field-emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD) while the optoelectronic properties were investigated by UV/Vis absorption spectrometry as well as photoluminescence and electroluminescence measurements. The field emission (FE) properties of the device were also measured and its turn-on field and current at 6 V/μm were determined. In principle, the growth of ZnO nanorods on porous siicon for optoelectronic applications is possible.

【 授权许可】

Unknown