New Analytical Model for Nanoscale Tri-Gate SOI MOSFETs Including Quantum Effects

IEEE Journal of the Electron Devices Society

P. Vimala¹  N. B. Balamurugan¹ 

[1] Department of Electronics and Communication Engineering, Thiagarajar College of Engineering, Tamil Nadu, India;

关键词: Device modeling;    energy quantization;    inversion charge;    Poisson–;    Schrodinger equation;    tri-gate MOSFET;   

DOI  :  10.1109/JEDS.2014.2298915

来源: DOAJ

【 摘 要 】

In this paper, an analytical model for tri-Gate (TG) MOSFETs considering quantum effects is presented. The proposed model is based on the analytical solution of Schrodinger-Poisson's equation using variational approach. An analytical expression of the inversion charge distribution function (ICDF) or wave function for the TG MOSFETs has been developed. This obtained ICDF is used to calculate the device parameters, such as the inversion charge centroid, threshold voltage, inversion charge, gate capacitance, and drain current. These parameters are modeled for various device dimensions and applied bias. The results are validated against the TCAD simulation results.

【 授权许可】

Unknown