Simulation of silicon quantum dots with diamond-channel by simplified ME model

Results in Physics

卷:38

Zhenhua Wu¹  Jie Gu¹  Xiaohui Zhu²  Huaxiang Yin² 

[1] University of the Chinese Academy of Sciences, Beijing 100049, China;

[2] Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, CAS, Beijing 100029, China;

关键词: Quantum dots;    Master equation;    Simulation;    Device modeling;   

DOI  :  

来源: DOAJ

【 摘 要 】

Developing novel silicon quantum dots (Si-QDs) on conventional CMOS process is one of the most important technologies in Si quantum computing to realize multi-bit integration with a large scale. In this paper, an analysis model based on master equation and realized by Python code is established to predict and optimize the performance of fabricated diamond channel Si-QDs for potential circuit applications. The model can fast describe the I-V characteristics of devices both in qualitative and semi quantitative method. The inherent tunneling process of Si-QDs can be well simulated by introducing additional parameters and the contribution of neighboring states can be analyzed by setting global parameters. In addition, the calculation speed and accuracy can be readily balanced by modifying the setting parameters. The simulation results of the model are in good agreement with the experimental results at low temperature, which lays a foundation for the performance prediction, structure and process optimization of the Si-QDs for a large scale circuit applications.

【 授权许可】

Unknown