Plasma resonant terahertz photomixers based on double graphene layer structures

2nd Russia-Japan-USA Symposium on the Fundamental and Applied Problems of Terahertz Devices and Technologies

Ryzhii, Maxim^1 ; Shur, Michael S.^2 ; Mitin, Vladimir^3 ; Satou, Akira^4 ; Ryzhii, Victor^4,5 ; Otsuji, Taiichi^4

Department of Computer Science and Engineering, University of Aizu, Japan^1

Department of Electrical, Electronics, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY, United States^2

Department of Electrical Engineering, University at Buffalo, Buffalo, NY, United States^3

Research Institute for Electrical Communication, Tohoku University, Sendai, Japan^4

Research and Educational Center Photonics and Infrared Technology, Bauman Moscow State Technical University, Russia^5

关键词: Device modeling;    G-L transitions;    Graphene layers;    Interband absorption;    Optical radiations;    Output frequency;    Resonant excitation;    Thz photomixer;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/486/1/012032/pdf
DOI  :  10.1088/1742-6596/486/1/012032

来源: IOP

【 摘 要 】

We propose terahertz (THz) photomixers based on double graphene layer (DGL) structures, utilizing the interband absorption of modulated optical radiation, tunneling or thermionic inter-GL transitions, and resonant excitation of plasma oscillations. Using the developed device model, we substantiate the operation of the photomixers and calculate their characteristics. We demonstrate that the output frequency-dependent power of THz radiation exhibits pronounced resonant peaks at the plasmonic resonant frequencies. The proposed THz photomixer can surpass the pertinent devices based on the standard heterostructures.