High Hole Concentration and Diffusion Suppression of Heavily Mg-Doped p-GaN for Application in Enhanced-Mode GaN HEMT

Nanomaterials

Thi Thu Mai¹  Jing-Rong Peng¹  Wu-Ching Chou¹  Cheng-Wei Liu¹  Jin-Ji Dai¹  Ssu-Kuan Wu¹  Hua-Chiang Wen¹  Han-Chieh Ho²  Wei-Fan Wang² 

[1] Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan;Technology Development Division, Episil-Precision Inc., Hsinchu 30010, Taiwan;

关键词: GaN material;    Mg doping;    MOCVD;    Hall measurement;    PL spectroscopy;   

DOI  :  10.3390/nano11071766

来源: DOAJ

【 摘 要 】

The effect of Mg doping on the electrical and optical properties of the p-GaN/AlGaN structures on a Si substrate grown by metal organic chemical vapor deposition was investigated. The Hall measurement showed that the activation efficiency of the sample with a 450 sccm Cp₂Mg flow rate reached a maximum value of 2.22%. No reversion of the hole concentration was observed due to the existence of stress in the designed sample structures. This is attributed to the higher Mg-to-Ga incorporation rate resulting from the restriction of self-compensation under compressive strain. In addition, by using an AlN interlayer (IL) at the interface of p-GaN/AlGaN, the activation rate can be further improved after the doping concentration reaches saturation, and the diffusion of Mg atoms can also be effectively suppressed. A high hole concentration of about 1.3 × 10¹⁸ cm⁻³ can be achieved in the p-GaN/AlN-IL/AlGaN structure.

【 授权许可】

Unknown