Nanomaterials | |
High Hole Concentration and Diffusion Suppression of Heavily Mg-Doped p-GaN for Application in Enhanced-Mode GaN HEMT | |
Thi Thu Mai1  Jing-Rong Peng1  Wu-Ching Chou1  Cheng-Wei Liu1  Jin-Ji Dai1  Ssu-Kuan Wu1  Hua-Chiang Wen1  Han-Chieh Ho2  Wei-Fan Wang2  | |
[1] Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan;Technology Development Division, Episil-Precision Inc., Hsinchu 30010, Taiwan; | |
关键词: GaN material; Mg doping; MOCVD; Hall measurement; PL spectroscopy; | |
DOI : 10.3390/nano11071766 | |
来源: DOAJ |
【 摘 要 】
The effect of Mg doping on the electrical and optical properties of the p-GaN/AlGaN structures on a Si substrate grown by metal organic chemical vapor deposition was investigated. The Hall measurement showed that the activation efficiency of the sample with a 450 sccm Cp2Mg flow rate reached a maximum value of 2.22%. No reversion of the hole concentration was observed due to the existence of stress in the designed sample structures. This is attributed to the higher Mg-to-Ga incorporation rate resulting from the restriction of self-compensation under compressive strain. In addition, by using an AlN interlayer (IL) at the interface of p-GaN/AlGaN, the activation rate can be further improved after the doping concentration reaches saturation, and the diffusion of Mg atoms can also be effectively suppressed. A high hole concentration of about 1.3 × 1018 cm−3 can be achieved in the p-GaN/AlN-IL/AlGaN structure.
【 授权许可】
Unknown