Theoretical analysis of effect of temperature on threshold parameters and field intensity in GaN material based heterostructure

Bulletin of materials science

D K Gautam¹  E P Samuel¹  D S Patil¹  S A Gaikwad¹ 

[1] Department of Electronics, North Maharashtra University, Jalgaon 425 001, India$$Department of Electronics, North Maharashtra University, Jalgaon 425 001, IndiaDepartment of Electronics, North Maharashtra University, Jalgaon 425 001, India$$

关键词: Field intensity;    GaN material;    heterostructure.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

Temperature dependent analysis to achieve better performance by reducing threshold current requirements and field intensity has been carried out for GaN/AlGaN heterostructure lasers. The mirror loss in the GaN cavity has been obtained as a function of temperature and cavity length. The quantum efficiency has been deduced for different values of cavity length. Dependence of recombination rate on band gap and temperature has been investigated. Threshold current density has been deduced for GaN lasers and effect of temperature on it has been investigated. The near field intensity analysis has been carried out at different temperatures for 10% aluminum mole fraction in GaN/AlGaN heterostructure lasers. Furthermore, the effective index and FWHM of near field has been investigated as a function of temperature. It has been deduced from our analysis that temperature has a dominant effect on the threshold conditions and near field intensity in the wide band gap GaN based lasers.

【 授权许可】

Unknown