Simulation and Optimization Design of SiC-Based PN Betavoltaic Microbattery Using Tritium Source

Crystals

Zhang Lin¹ 

[1] School of Electronic and Control Engineering, Chang’an University, Xi’an 710064, China;

关键词: radiation-voltaic;    betavoltaic microbattery;    model;    tritium;    sic;   

DOI  :  10.3390/cryst10020105

来源: DOAJ

【 摘 要 】

In this paper, the Monte Carlo method and numerical model are used to build the electrical model of a SiC-based betavoltaic microbattery using a ³H source, and the influences of structural parameters and the surface recombination effect on the output characteristics of the SiC PN battery are simulated. According to Monte Carlo calculations based on the energy spectrum of the ³H source, the ionization energy deposition approaches the exponential distribution along the depth direction, and most of the 22rs are concentrated near the material surface. The ionization energy deposition data is converted into non-equilibrium carrier information for the numerical simulation of the battery’s output characteristics. The simulation results show that the conversion efficiency of the battery rises first, and then decreases with the increase of the doping concentration of the N region. This is because the N region-doping affects the depletion region width and the built-in electrical potential at the same time. After considering the surface recombination effect, the conversion efficiency decreased significantly. Thinning the thickness of or moderately reducing the doping concentration of the P region will weaken the surface recombination effect.

【 授权许可】

Unknown