Strain-Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates

Nanoscale Research Letters

Bai Jun Zhang¹  Zhi Yan Zhou²  Zhe Chuan Feng²  Yao Min Huang²  Tao Lin²  Kun Yang² 

[1] School of Electronics and Information Technology, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University;School of Physical Science and Technology, Laboratory of Optoelectronic Materials and Detection Technology, Guangxi Key Laboratory for Relativistic Astrophysics,, Guangxi University;

关键词: InGaN/GaN multiple quantum well;    Luminescence;    Time-resolved photoluminescence;    Silicon substrate;   

DOI  :  10.1186/s11671-018-2663-6

来源: DOAJ

【 摘 要 】

Abstract This paper reports the photoluminescence (PL) properties of InGaN/GaN multiple quantum well (MQW) light-emitting diodes grown on silicon substrates which were designed with different tensile stress controlling architecture like periodic Si δ-doping to the n-type GaN layer or inserting InGaN/AlGaN layer for investigating the strain-controlled recombination mechanism in the system. PL results turned out that tensile stress released samples had better PL performances as their external quantum efficiencies increased to 17%, 7 times larger than the one of regular sample. Detail analysis confirmed they had smaller nonradiative recombination rates ((2.5~2.8)×10−2 s−1 compared to (3.6~4.7)× 10−2 s−1), which was associated with the better crystalline quality and absence of dislocations or cracks. Furthermore, their radiative recombination rates were found more stable and were much higher ((5.7~5.8) ×10−3 s−1 compared to [9~7] ×10−4 s−1) at room temperature. This was ascribed to the suppression of shallow localized states on MQW interfaces, leaving the deep radiative localization centers inside InGaN layers dominating the radiative recombination.

【 授权许可】

Unknown