Carrier dynamics in ZnxCd1-xO films grown by molecular beam epitaxy

4th International Conference on Manufacturing, Optimization, Industrial and Material Engineering

Cheng, F.J.^1 ; Lee, Y.C.^1 ; Hu, S.Y.^2 ; Lin, Y.C.^3 ; Tiong, K.K.^3 ; Chou, W.C.^4

Department of Electrical Engineering, Tungnan University, Shenkeng, New Taipei City, Taiwan^1

Department of Digital Technology Design, Tungfang Design Institute, Kaohsiung, Taiwan^2

Department of Electrical Engineering, National Taiwan Ocean University, Keelung, Taiwan^3

Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan^4

关键词: Alloy semiconductors;    Carrier dynamics;    Carrier localization;    Decay curves;    Emission-energy dependence;    Luminescence mechanisms;    Temperature dependence;    Time-resolved photoluminescence;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/131/1/012005/pdf
DOI  :  10.1088/1757-899X/131/1/012005

来源: IOP

【 摘 要 】

In this work, the carrier dynamics in Zn1-xCdxO thin films with different Cd contents grown by molecular beam epitaxy system have been investigated using photoluminescence and time-resolved photoluminescence measurements. The carrier lifetime can be estimated from the PL decay curve fitted by triple exponential function. The emission energy dependence and temperature dependence of the PL decay time indicate that carrier localization dominate the luminescence mechanism of the ZnCdO alloy semiconductor.