Low-Temperature In-Induced Holes Formation in Native-SiOx/Si(111) Substrates for Self-Catalyzed MBE Growth of GaAs Nanowires

Materials

Vladimir V. Federov¹  Evgeniy V. Ubyivovk¹  George E. Cirlin¹  Rodion R. Reznik¹  Vladislav O. Gridchin¹  Dmitrii S. Shevchuk¹  Artem I. Khrebtov²  Konstantin P. Kotlyar³ 

[1] Alferov University, ul. Khlopina 8/3, 194021 St. Petersburg, Russia;ITMO University, Kronverkskiy pr. 49, 197101 St. Petersburg, Russia;Saint-Petersburg State University, Universitetskaya Emb. 13B, 198504 St. Petersburg, Russia;

关键词: nanowires;    silicon;    GaAs;    self-catalyzed growth;    molecular-beam epitaxy;   

DOI  :  10.3390/ma13163449

来源: DOAJ

【 摘 要 】

The reduction of substrate temperature is important in view of the integration of III–V materials with a Si platform. Here, we show the way to significantly decrease substrate temperature by introducing a procedure to create nanoscale holes in the native-SiO_x layer on Si(111) substrate via In-induced drilling. Using the fabricated template, we successfully grew self-catalyzed GaAs nanowires by molecular-beam epitaxy. Energy-dispersive X-ray analysis reveals no indium atoms inside the nanowires. This unambiguously manifests that the procedure proposed can be used for the growth of ultra-pure GaAs nanowires.

【 授权许可】

Unknown