Gain Characteristics of InGaAsN Quantum Well Heterostructures with GaAs and InP Substrates

International Conference on Startup Ventures: Technology Developments and Future Strategies

社会科学（总论）

Khan, M.I.^1 ; Sandhya, K.^2 ; Khan, A.M.^3 ; Alvi, P.A.^1

Department of Physics, Banasthali Vidyapith, Banasthali, Rajasthan

304022, India^1

Higher Colleges of Technology, Abu Dhabi, United Arab Emirates^2

Department of Electronics and Communication Engineering, Integral University, Lucknow, Uttar Pradesh

226026, India^3

关键词: GaAs;    Gain characteristic;    InGaAsN;    InGaAsN materials;    InGaAsN quantum wells;    Quantum mechanical;    Simulated results;    Substrate effects;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/594/1/012044/pdf
DOI  :  10.1088/1757-899X/594/1/012044

学科分类：社会科学、人文和艺术（综合）

来源: IOP

【 摘 要 】

The present paper reports the effect of substrate on the optical gain characteristics of InGaAsN material based quantum well (QW) heterostructure. To analyze the substrate effect on the optical gain, two substrate, namely, GaAs and InP have been chosen. Taking in to account both of the substrates, the quantum mechanical approach (k.p method) has been adopted to calculate the confinement of the carriers related with quantum well and the optical gain. In addition, for InGaAsN/InP heterostructure, the cladding effect has also been observed. The simulated results exhibit that the substrate has played a very important role in modifying the optical gain characteristics due to the presence of strain which comes into play due to the lattice discrepancy.