Experimental Evidence of the Impact of Nitrogen on Carrier Capture and Escape Times in InGaAsN/GaAs Single Quantum Well

IEEE Photonics Journal

Nelson Tansu¹  Lifang Xu²  Jeng-Ya Yeh³  Dinesh Patel⁴  Carmen S. Menoni⁴  Luke J. Mawst⁵ 

[1] Computer Engineering, University of Wisconsin-Madison, Madison, WI, USA;$^{1}$Department of Electrical and Computer Engineering, Colorado State University, Fort Collins, CO, USA;$^{2}$Reed Center for Photonics, Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, WI, USA;Department of Electrical and Computer Engineering, Colorado State University, Fort Collins, CO, USA;;Reed Center for Photonics, Department of Electrical &

关键词: Quantum-well (QW) lasers;    carrier capture and escape process;    InGaAsN;    1.3-$\mu\hbox{m}$ lasers;   

DOI  :  10.1109/JPHOT.2012.2230251

来源: DOAJ

【 摘 要 】

We report our experimental results and theoretical analysis on carrier escape time in In_0.4Ga_0.6As_{1 -}yNy/GaAs (y = 0; 0.005) ridge waveguide single-quantum-well (QW) lasers with N-contents of 0% and 0.5%. The experiments were carried out by using novel time-resolved two-color pump-probe transmission measurements. Our results show a significant decrease of carrier escape time with nitrogen incorporation in the InGaAsN QW, which agrees well with the values obtained from the theoretical calculation based on thermally activated hole leakage. The measurement results provide experimental supports for hole leakage theory.

【 授权许可】

Unknown