Growth and application of planar III-V semiconductor nanowires grown with MOCVD

Metalorganic chemical vapor deposition (MOCVD);nanotechnology;GaAs;Metal-semiconductor field effect transistor (MESFET);nanowire;semiconductor

Fortuna, Seth A. ; Li, Xiuling ; Li ; Xiuling

关键词: Metalorganic chemical vapor deposition (MOCVD);    nanotechnology;    GaAs;    Metal-semiconductor field effect transistor (MESFET);    nanowire;    semiconductor;   

Others  :  https://www.ideals.illinois.edu/bitstream/handle/2142/14730/Fortuna_Seth.pdf?sequence=2&isAllowed=y

美国|英语

来源: The Illinois Digital Environment for Access to Learning and Scholarship

【 摘 要 】

The semiconductor nanowire has been widely studied over the past decade and identified as a promising nanotechnology building block with application inphotonics and electronics. The flexible bottom-up approach to nanowire growth allows for straightforward fabrication of complex 1D nanostructures withinteresting optical, electrical, and mechanical properties. III-V nanowires in particular are useful because of their direct bandgap, high carrier mobility, and ability to form heterojunctions and have been used to make devices such as light-emitting diodes, lasers, and field-effect transistors. However, crystal defects are widely reported for III-V nanowires when grown in the common out-of-plane <111>B direction. Furthermore, commercialization of nanowireshas been limited by the difficulty of assembling nanowires with predetermined position and alignment on a wafer-scale.In this thesis, planar III-V nanowires are introduced as a low-defect and integratable nanotechnology building block grown with metalorganic chemicalvapor deposition. Planar GaAs nanowires grown with gold seed particles self-align along the <110> direction on the (001) GaAs substrate. Transmission electron microscopy reveals that planar GaAs nanowires are nearly free ofcrystal defects and grow laterally and epitaxially on the substrate surface. The nanowire morphology is shown to be primarily controlled through growth temperature and an ideal growth window of 470 +\- 10 °C is identified for planar GaAs nanowires. Extension of the planar growth mode to other materialsis demonstrated through growth of planar InAs nanowires. Using asacrificial layer, the transferof planar GaAs nanowires onto silicon substrates with control over the alignment and position is presented. A metal-semiconductor field-effect transistor fabricated with a planar GaAs nanowire shows bulk-like low-field electrontransport characteristics with high mobility. The aligned planar geometry and excellent material quality of planar III-V nanowires may lead to highly integrated III-V nanophotonics and nanoelectronics.