One watt gallium arsenide class-E power amplifier with a thin-film bulk acoustic resonator filter embedded in the output network

The Journal of Engineering

Kyle Holzer¹  Jeffrey S. Walling¹ 

[1] University of Utah PERFIC Laboratory, Salt Lake City, UT 84112, USA

关键词: frequency 2496 MHz to 2690 MHz;    power 1 W;    thin-film bulk acoustic resonator filter;    finite inductance;    class-E power amplifier;    out-of-b;    spectrum filtering;    power added efficiency;    HEMT;    out-of-b;    spectrum suppression;    PA;    linearisation techniques;    GaAs;    PAE;    ACPF7041 compact b;    pass FBAR filter;    discrete pseudomorphic high-electron-mobility transistor;   

DOI  :  10.1049/joe.2015.0058

学科分类：工程和技术（综合）

来源: IET

【 摘 要 】

Integration of a class-E power amplifier (PA) and a thin-film bulk acoustic wave resonator (FBAR) filter is shown to provide high power added efficiency in addition to superior out-of-band spectrum suppression. A discrete gallium arsenide pseudomorphic high-electron-mobility transistor is implemented to operate as a class-E amplifier from 2496 to 2690 MHz. The ACPF7041 compact bandpass FBAR filter is incorporated to replace the resonant LC tank in a traditional class-E PA. To reduce drain voltage stress, the supply choke is replaced by a finite inductance. The fabricated PA provides up to 1 W of output power with a peak power added efficiency (PAE) of 58%. The improved out-of-band spectrum filtering is compared to a traditional class-E with discrete LC resonant filtering. Such PAs can be combined with linearisation techniques to reduce out-of-band emissions.

【 授权许可】

CC BY