Different III-V semiconductor nanowires with quantum dots on silicon: growth by molecular-beam epitaxy and properties

Naučno-tehničeskij Vestnik Informacionnyh Tehnologij, Mehaniki i Optiki

Artem I. Khrebtov¹  Konstantin P. Kotlyar²  Rodion R. Reznik³  Igor V. Shtrom⁴  Yuriy B. Samsonenko⁵  George E. Cirlin⁶ 

[1] Researcher, Institute for Analytical Instrumentation of the Russian Academy of Sciences, Saint Petersburg, 190103, Russian Federation;Junior Researcher, St. Petersburg State University, Saint Petersburg, 199034, Russian Federation;PhD, Junior Researcher, ITMO University, Saint Petersburg, 197101, Russian Federation;PhD, Senior Researcher, St. Petersburg State University, Saint Petersburg, 199034, Russian Federation;Scientific Researcher, Alferov University, Saint Petersburg, 194021, Russian Federation;Senior Researcher, Alferov University, Saint Petersburg, 194021, Russian Federation;

关键词: semiconductors;    iii-v;    nanowires;    quantum dots;    silicon;    morphology;    photoluminescence;   

DOI  :  10.17586/2226-1494-2021-21-6-866-871

来源: DOAJ

【 授权许可】

Unknown