Optical Performance of Top-Down Fabricated AlGaN Nanorod Arrays with Multi-Quantum Wells Embedded

Nanoscale Research Letters

Shucheng Ge¹  Rong Zhang¹  Na Gao¹  Kai Huang¹  Penggang Li¹  Junyong Kang¹  Shiqiang Lu¹  Jiangping Dai²  Youdou Zheng²  Bin Liu² 

[1] Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University;Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University;

关键词: DUV AlGaN multi-quantum wells;    Nanorod light-emitting diodes;    Internal quantum efficiency;    Light extraction;   

DOI  :  10.1186/s11671-019-3003-1

来源: DOAJ

【 摘 要 】

Abstract Deep ultraviolet AlGaN-based nanorod (NR) arrays were fabricated by nanoimprint lithography and top-down dry etching techniques from a fully structural LED wafer. Highly ordered periodic structural properties and morphology were confirmed by scanning electron microscopy and transmission electron microscopy. Compared with planar samples, cathodoluminescence measurement revealed that NR samples showed 1.92-fold light extraction efficiency (LEE) enhancement and a 12.2-fold internal quantum efficiency (IQE) enhancement for the emission from multi-quantum wells at approximately 277 nm. The LEE enhancement can be attributed to the well-fabricated nanostructured interface between the air and the epilayers. Moreover, the reduced quantum-confined stark effect accounted for the great enhancement in IQE.

【 授权许可】

Unknown