High-Order Mode Rotator on the SOI Integrated Platform

IEEE Photonics Journal

Xinliang Zhang¹  Donghui Zhao¹  Jing Xu²  Xun Xue³  Jiamin Wang³ 

[1] Electron. Inf., Huazhong Univ. of Sci. &Technol., Wuhan, China;;Sch. of Opt. &

关键词: Silicon nanophotonics;    Waveguide devices;    Optical interconnects;   

DOI  :  10.1109/JPHOT.2016.2542840

来源: DOAJ

【 摘 要 】

.A high-order mode rotator based on a silicon-on-insulator strip waveguide with asymmetrical cross section is proposed and optimized to rotate the spatial distribution of the E₂₁ mode by 90° into that of the E₁₂ mode. The subscripts i and j of the mode E_ij correspond to the number of lobes in the intensity distribution of the mode along the horizontal and vertical axes, respectively. The mode conversion efficiency and the corresponding length of the mode rotator device are presented as a function of design parameters for both the transverse magnetic (TM) and transverse electric (TE) polarizations. The fabrication tolerance of the structure is also analyzed. We further present simulation results of a two-mode multiplexing system based on E₂₁ and E₁₂ showing a mode extinction ratio exceeding 15 dB over a wide wavelength range of 100 nm.

【 授权许可】

Unknown