期刊论文详细信息
IEEE Photonics Journal
High-Extinction-Ratio and Compact 1310/1550 nm Wavelength Diplexer on SOI Platform Based on an SWG-Structured Two-Mode Interference Coupler
Luhua Xu1  Stephane Lessard2  Jinsong Zhang3  Deng Mao3  Yun Wang3  Yannick DrMello3  Maxime Jacques3  David V. Plant3  Zhenping Xing3 
[1] CMC Microsystems, Kingston, ON, Canada;Ericsson Canada, Montreal, QC, Canada;Photonics System Group, Department of Electrical and Computer Engineering, McGill University, Montreal, QC, Canada;
关键词: Waveguide devices;    silicon nanophotonics;    subwavelength structures;   
DOI  :  10.1109/JPHOT.2022.3149998
来源: DOAJ
【 摘 要 】

We propose a 1310/1550 nm wavelength diplexer on a 220-nm silicon-on-insulator (SOI) platform. The device is based on a compact two-mode interference (TMI) coupler enabled by a subwavelength grating (SWG) slot. The ideal beat length ratio of 2:1 is achieved with the transverse magnetic (TM) mode by fine-tuning the SWG slot parameters, resulting in a TMI length of only 37 µm. We reveal that the key to high extinction ratio (ER) is the careful design of the tapers, and the device achieves high ERs of 28.05/42.54 dB at 1310/1550 nm with simulation. The measured bandwidths for ER $>$ 15 dB are 82 nm and 56 nm at O- and C-band. Moreover, the design guarantees large calculated 1-dB-insertion-loss (IL) bandwidths of 192/123 nm at 1310/1550 nm. To the best of our knowledge, this is the first experimental demonstration of a high-performance compact silicon 1310/1550 nm diplexer based on a TMI coupler.

【 授权许可】

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